smd type ic www.kexin.com.cn 1 smd type transistors 1 emitter 2 base 3 collector general purpose transistor MMBT2222AW features general purpose transistor. absolute maximum ratings ta = 25 parameter symbol rating unit collector-emitter voltage v ceo 40 v collector-base voltage v cbo 75 v emitter-base voltage v ebo 6.0 v collector current i c 600 ma total device dissipation fr-5 board p d 150 mw thermal resistance, junction-to-ambient r ja 833 /w junction temperature t j 150 storage temperature t stg -55to+150
www.kexin.com.cn 2 smd type ic smd type transistors MMBT2222AW marking marking p1 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-emitter breakdown voltage v (br)ceo i c =1.0ma,i b =0 40 v collector-base breakdown voltage v (br)cbo i c =10a,i e =0 75 v emitter-base breakdown voltage v (br)ebo i e =10a,i c =0 6 v base cutoff current i bl v ce =60v,v eb =3.0v 20 na collector cutoff current i cex v ce =60v,v eb =3.0v 10 na dc current gain * h fe i c =150ma,v ce =10v 100 300 i c =150ma,i b =15ma 0.3 i c =500ma,i b =50ma 1.0 i c =150ma,i b =15ma 0.6 1.2 i c =500ma,i b =50ma 2.0 current-gain-bandwidth product f t i c =20ma,v ce =20v,f=100mhz 300 mhz output capacitance c obo v cb =10v,i e =0,f=1.0mhz 8.0 pf input capacitance c ibo v eb =0.5v,i c = 0, f = 1.0 mhz 30 pf input impedance h ie v ce =10v,i c = 10 ma, f = 1.0 khz 0.25 1.25 k voltage feedback ratio h re v ce =10v,i c = 10 ma, f = 1.0 khz 4.0 x10 -4 small-sgnal current gain h fe v ce =10v,i c = 10 ma, f = 1.0 khz 75 375 output admittance h oe v ce =10v,i c = 10 ma, f = 1.0 khz 25 200 mhos noise figure nf v ce =10v,i c =100a,r s =1.0k,f =1.0khz 4.0 db delay time t d 10 ns rise time t r 25 ns storage time t s v cc =30v,i c = 150 ma, 225 ns fall time t f i b1 =i b2 =15ma 60 ns * pulse test: pulse width 300 s, duty cycle 2.0%. v cc =3.0v,v be =-0.5v, i c =150ma,i b1 =15ma collector-emitter saturation voltage * base-emitter saturation voltage * v v ce( sat) v be( sat)
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